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 MBR2535CT, MBR2545CT
MBR2545CT is a Preferred Device
SWITCHMODE] Power Rectifiers
The MBR2535CT/45CT series uses the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
Features http://onsemi.com
* * * * * * * * *
Guardring for Stress Protection Low Forward Voltage 175C Operating Junction Temperature Pb-Free Packages are Available* Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 1.9 grams (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds
SCHOTTKY BARRIER RECTIFIERS 30 AMPERES 35 and 45 VOLTS
1 2, 4 3
Mechanical Characteristics
4
MARKING DIAGRAM
TO-220AB CASE 221A PLASTIC 1
AY WW B25x5G AKA
2
3 A Y WW B25x5 x G AKA = Assembly Location = Year = Work Week = Device Code = 3 or 4 = Pb-Free Package = Diode Polarity
ORDERING INFORMATION
Device MBR2535CT MBR2535CTG MBR2545CT MBR2545CTG Package TO-220 TO-220 (Pb-Free) TO-220 TO-220 (Pb-Free) Shipping 50 Units/Rail 50 Units/Rail 50 Units/Rail 50 Units/Rail
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 1
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2008
May, 2008 - Rev. 11
Publication Order Number: MBR2535CT/D
MBR2535CT, MBR2545CT
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR2535CT MBR2545CT Average Rectified Forward Current (Rated VR, TC = 160C) Peak Repetitive Forward Current, per Diode Leg (Rated VR, Square Wave, 20 kHz, TC = 150C) Non-Repetitive Peak Surge Current per Diode Leg (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) Storage Temperature Range Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR) ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B Symbol VRRM VRWM VR IF(AV) IFRM IFSM IRRM Tstg TJ dv/dt ESD Value Unit V 35 45 30 30 150 1.0 -65 to +175 -65 to +175 10,000 >400 >8000 A A A A C C V/ms V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS (Per Leg)
Characteristic Thermal Resistance,- Junction-to-Case - Junction-to-Ambient (Note 2) 2. When mounted using minimum recommended pad size on FR-4 board. Symbol RqJC RqJA Value 1.5 50 Unit C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Symbol VF Characteristic Instantaneous Forward Voltage (Note 3) Condition IF = 15 Amp, TJ = 25C IF = 15 Amp, TJ = 125C IF = 30 Amp, TJ = 25C IF = 30 Amp, TJ = 125C Rated dc Voltage, TJ = 25C Rated dc Voltage, TJ = 125C Min - - - - - - Typ - 0.50 - 0.65 - 9.0 Max 0.62 0.57 0.82 0.72 0.2 25 Unit V
IR
Instantaneous Reverse Current (Note 3)
mA
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
2
MBR2535CT, MBR2545CT
IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 1000 200 100 40 20 10 4.0 2.0 1.0 0.4 0.2 0.1 0.04 0.02 0.01 0.004 0.002 IR , REVERSE CURRENT (mA) TJ = 150C 125C 100C 75C 25C 0 10 20 30 40 50
100 TJ = 125C 10 150C 1.0 25C 0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VF , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage, Per Leg
Figure 2. Typical Reverse Current, Per Leg
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
48 44 40 36 32 28 24 20 16 12 8.0 4.0 0 110 RATED VOLTAGE APPLIED RqJC = 1.5C/W 120 130 140 150 160 170 180 SQUARE WAVE
48 44 40 36 32 28 24 20 16 12 8.0 4.0 0 0 SQUARE WAVE dc SQUARE WAVE 20 40 60 80 100 120 140 160 180 dc RATED VR APPLIED RqJA = 16C/W (With TO-220 Heat Sink) RqJA = 60C/W (No Heat Sink)
dc
TC, CASE TEMPERATURE (C)
TA, AMBIENT TEMPERATURE (C)
Figure 3. Current Derating, Per Device
Figure 4. Current Derating, Per Device
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
32 28 24 20 16 10 12 20 8.0 TJ = 125C 4.0 0 0 4.0 8.0 12 16 20 24 28 32 36 40 IF, AVERAGE FORWARD CURRENT (AMPS) I (CAPACITATIVE LOAD) PK + 5.0 I dc I (RESISTIVE LOAD) PK + p I SQUARE WAVE
AV
AV
Figure 5. Forward Power Dissipation http://onsemi.com
3
MBR2535CT, MBR2545CT
PACKAGE DIMENSIONS
TO-220 CASE 221A-09 ISSUE AF
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.161 0.095 0.105 0.110 0.155 0.014 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 ANODE CATHODE ANODE CATHODE MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 4.09 2.42 2.66 2.80 3.93 0.36 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04
-T- B
4
SEATING PLANE
F
T
C S
Q
123
A U K
H Z L V G D N
R J
STYLE 6: PIN 1. 2. 3. 4.
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
http://onsemi.com
4
MBR2535CT/D


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